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中文摘要：
研究了碲锌镉（CZT）晶片表面的机械研磨和机械抛光工艺。采用不同粒度的Al2O3磨料对CZT晶体表面进行机械研磨和机械抛光,并研究了工艺参数变化对CZT晶体表面质量、粗糙度、研磨速度和抛光速度的影响。结果表明,机械研磨采用粒度2.5μm的Al2O3磨料,最佳的研磨压力和研磨盘转速分别为120g/cm2和75r/min,研磨速度为1μm/min;机械抛光采用粒度0.5μm的Al2O3抛光液,最佳的抛光液浓度为6.5%（质量分数）,抛光速度为0.28μm/min。AFM测试得到机械研磨后晶片表面粗糙度Ra值为13.83nm,机械抛光4h后,Ra降低到4.22nm。
英文摘要：
In this paper,the mechanical lapping and polishing processes of cadmium zinc telluride（CZT） wafers were investigated.Adopting the Al2O3 powder with different diameter,the CZT wafers were mechanical lapped and polished,considering the parameters of lapping pressure,lapping plate rotation,and duration times.Then the surface quality,roughness,lapping and polishing rate were investigated by means of metallographic microscope,atomic force microscope and micrometer measurement.The results showed that,with the 2.5μm diameter Al2O3 powder,the optimal lapping pressure and plate rotation speed were 120g/cm2 and 75 r/min respectively,and lapping rate was 1μm/min.Under the mechanical polishing with 0.5μm Al2O3 suspension,the optimal concentration of Al2O3 suspension was 6.5wt% with the polishing rate of 0.28 μm/min.The AFM measurement showed that,after lapping,the roughness Ra value of CZT wafers was 13.83nm,then after polishing for 4h the Ra value decreased to 4.22nm.
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