中文摘要：

采用对称-单纯形法对电沉积渗硅熔融盐配方进行了优化设计。设计结果表明,通过计算得到的渗层厚度与熔融盐成分之间的回归方程具有明显的显著性,选择出最佳配方为n（NaCl）∶n（KCl）∶n（NaF）∶n（SiO2）=1∶1∶3∶0.3,用此配方在低硅钢基体上获得了34.51μm渗硅层,实验值与预测值基本吻合。辉光放电光谱仪测定出渗硅层中Si元素呈梯度分布,渗硅层与基体结合良好,光学金相照片显示渗硅层厚度均匀。

英文摘要：

The formula of molten salts for electrodeposition siliconizing was optimized using symmetry-simplex method.The results show that the calculated regression equation between siliconized layer thickness and molten salts components is well fit for actual relation.Using the obtained formula component of n（NaCl）∶n（KCl）∶n（NaF）∶n（SiO2）=1∶1∶3∶0.3（in mole）,a 34.51 μm siliconized layer is achieved on a low-silicon steel base.From glow discharge spectrometry,it is found that Si is observeed in a gradient distribution along with the thickness,and the thickness of siliconized layer is also uniform.