中文摘要：

研究了Si在AlxGa1-xAs（0≤z≤1）中的掺杂行为．为比较Al组份对Si掺杂浓度的影响，在用气态源分子束外延生长（GSMBE）掺Sin型AlxGa1-xAs（0≤x≤1）的所有样品时，n型掺杂剂Si炉的温度恒定不变．用Hall效应测量外延层的自由载流子浓度和迁移率，用X射线双晶衍射迫摆曲线测量外延层的组份．测试结果表明，当AlxGa1-xAs中Al组份从0增至0．38时，Si的掺杂浓度从4×10^18cm^-3降至7．8×10^16cm^-3，电子迁移率从1900cm^2／Vs降至100cm^2／Vs．这与AlxGa1-xAs材料的Г-x直接-间接带隙的转换点十分吻合．在AlxGa1-xAs全组份范转内，自由载流子浓度随Al组份从0至1呈“V”形变化，在X=0．38处呈最低点．在x〉0．4之后，AlxGa1-xAs的电子迁移随Al组分的增加，一直维持较低值且波动幅度很小．

英文摘要：

The doping behavior of Si in AlGaAs with AlAs mole fraction from 0 to 1 was reported. Si-doped Alx Ga1-x As layers were grown by gas source molecular beam epitaxy with a constant Si cell temperature for all samples. The electrical properties and composition of the ternary alloys were characterized by Hall effect and X-ray diffraction, respectively. Resuits show that the electron concentration of Si-doped Alx Ga1-x As varying with Al mole fraction has a minimum value at x = 0.38, which is the F-X direct-indirect band crossover of AlGaAs system. The Hall mobility decreases with the increasing of AlAs mole fraction till about x = 0.4, hereafter it remains at a low value of mobility with small change rate.