采用电化学原子层外延法(ECALE)在Au电极上成功地制备了Bi2Te3化合物热电薄膜。通过循环伏安扫描研究Te和Bi在Au衬底上的电化学特性。使用自动沉积系统交替欠电位沉积Te、Bi原子层200个循环获得沉积物。XRD、EDX和FESEM测试结果表明循环沉积200层后得到的沉积物Bi和Te的化学计量比为2:3。且是Bi2Te3薄膜化合物。而非单质Bi和Te的简单混合;薄膜均匀、致密、平整且可重复性好。以(015)为最优取向外延生长的。
The Bi2Te3 thin film deposition on Au substrate using electrochemical atomic layer epitaxy (ECALE) is reported in this article. Cyclic voltammograms of Bi and Te on the Au substrate were performed to investigate electrochemical aspects of tellurium and bismuth. 200 cycle deposits were formed by using an optimized deposition program. X-ray diffraction,EDX quantitative analysis and FESEM studies of the morphology of substrates and deposits indicated the stoichiometric ratio of Bi to Te is 2 : 3; the deposits are Bi2Te3, not mixture of Bi and Te; the quality of the deposits are symmetrical,compact and glazed, with a (015) preferred orientation, which suggested an epitaxy growth mechanism of Bi2 Te3 thin films has taken place.