中文摘要：

本文研究AlN作为AlxGa1-xN/GaN插入层引起的电子输运性质的变化,考虑了AlxGa1-xN和AlN势垒层的自发极化、压电极化对AlxGa1-xN/AlN/GaN双异质结高电子迁移率晶体管（HEMT）中极化电荷面密度、二维电子气（2DEG）浓度的影响,分析了AlN厚度与界面粗糙度散射和合金无序散射的关系；结果表明,2DEG浓度、界面粗糙度散射和合金无序散射依赖于AlN层厚度,插入一层1—3 nm薄的AlN层,可以明显提高电子迁移率。

英文摘要：

This paper investigates the changes of electron transport properties in AlxGa1-xN/GaN with an inserted AlN layer. The polarization charge density and two-dimensional electron gas （2DEG） sheet density in AlxGa1-xN/AlN/GaN double heterojunction high electron mobility transistors （HEMT） affected by the spontaneous polarization and piezoelectric polarization in AlxGa1-xN and AlN barrier are studied. Relations of interface roughness scattering and alloy disorder scattering with the AlN thickness are systematically analyzed. It is found that the alloy disorder scattering is the main scattering mechanism in AlxGa1-xN/GaN heterojunction high-electron-mobility transistors, while the interface roughness scattering is the main scattering mechanism in AlxGa1-xN/AlN/GaN double-heterojunction structure. It is also known that the 2DEG sheet density, interface roughness scattering and alloy disorder scattering are depended on the thickness of the inserted AlN layer. The 2DEG sheet density increases slightly and the mobility increases obviously by inserting an AlN layer about 1—3 nm. Taking Al mole fraction of 0.3 as an example, if without AlN layer, the 2DEG sheet density is 1.47 × 1013 cm-2 with the mobility limited by the interface roughness scattering of 1.15 × 104 cm2·V-1·s-1, and the mobility limited by alloy disorder scattering of 6.07 × 102 cm2·V-1·s-1. After inserting an AlN layer of 1 nm, the 2DEG sheet density increases to 1.66 × 1013 cm-2, and the mobility limited by the interface roughness scattering reduces to 7.88 × 103 cm2·V-1·s-1 while the mobility limited by alloy disorder scattering increases greatly up to 1.42 × 108 cm2·V-1·s-1.