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Electron interferometry in the proximity of amorphous ultrathin SiO2/Si
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：0
  • 页码：248-252
  • 语言：英文
  • 相关项目：半导体多层超薄膜场发射冷阴极的制备及其结构增强机理研究
作者： Wang, R. Z.|Xu, J. B.|Ho, H. P.|Xue, K.|
同期刊论文项目
半导体多层超薄膜场发射冷阴极的制备及其结构增强机理研究
期刊论文 22 会议论文 6 专利 2
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