位置：成果数据库 > 会议 > 会议详情页
A Novel Triple RESURF LDMOS with Partial N+ Buried Layer
  • 所属机构名称：电子科技大学
  • 会议名称：2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
  • 成果类型：会议
  • 相关项目：SOI高压器件场控体电场降低REBULF理论与新结构
作者： Fan Xiang|Zhuo Wang|Heng-Juan Wen|Xin Zhou|Ming Qiao|Bo Zhang|
同会议论文项目
SOI高压器件场控体电场降低REBULF理论与新结构
期刊论文 16 会议论文 7 专利 20
同项目会议论文
A 300 V Thin Layer SOI nLDMOS Based on RESURF and MFP
High-Voltage Thin Layer SOI Technology for Negative Power Supply
High voltage SJ-pLDMOS with Variation Lateral Doping drift layer
A Novel Substrate-Assisted RESURF Technology for Small Curvature Radius Junction
Super Junction LDMOS Technologies for Power Integrated Circuits
High-Voltage Thick Layer SOI Technology for PDP Scan Driver IC