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A Novel Substrate-Assisted RESURF Technology for Small Curvature Radius Junction
  • 所属机构名称：电子科技大学
  • 会议名称：IEEE 23rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
  • 成果类型：会议
  • 相关项目：SOI高压器件场控体电场降低REBULF理论与新结构
作者： Qiao, Ming|Hu, Xi|Wen, Hengjuan|Wang, Meng|Luo, Bo|Luo, Xiaorong|Wang, Zhuo|Zhang, Bo|Li, Zhaoji|
同会议论文项目
SOI高压器件场控体电场降低REBULF理论与新结构
期刊论文 16 会议论文 7 专利 20
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