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High voltage SJ-pLDMOS with Variation Lateral Doping drift layer
  • 所属机构名称：电子科技大学
  • 会议名称：2010 International Conference on Communications, Circuits and Systems (ICCCAS)
  • 成果类型：会议
  • 相关项目：SOI高压器件场控体电场降低REBULF理论与新结构
作者： Bo Luo|Ming Qiao|Yongchun Wang|Mingliang Kou|Jun Ye|Bo Zhang|Zhaoji Li|
同会议论文项目
SOI高压器件场控体电场降低REBULF理论与新结构
期刊论文 16 会议论文 7 专利 20
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