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Performance improvement of reactive magnetron sputtering ZnO-TFT after annealing in N2 ambient
  • 所属机构名称：北京大学
  • 会议名称：2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 201
  • 时间：2012
  • 成果类型：会议
  • 相关项目：源漏具有复肖特基势垒的MOS场效应晶体管的研究
作者： Yao, Hui-Kun|Sun, Lei|Geng, You-Feng|Li, Yong-Qi|Xia, Yu-Qian|Cai, Jian|Zhu, Wen-Tong|Han, De-Dong|
同会议论文项目
源漏具有复肖特基势垒的MOS场效应晶体管的研究
期刊论文 5 会议论文 5 专利 6
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