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Impact of B-site Hf 4+-doping on the structural and ferroelectric properties of Bi 4 Ti3O12 thin fil
  • 所属机构名称：电子科技大学
  • 会议名称：International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technolog
  • 成果类型：会议
  • 会场：Beijing, China
  • 相关项目：铁电－铁磁多层复合薄膜中界面应力对结构和性能作用规律的研究
作者： Ji, Hong|Zhang, Yu|Zhu, Jun|Wang, Xiaoping|Zuo, Changming|
同会议论文项目
铁电－铁磁多层复合薄膜中界面应力对结构和性能作用规律的研究
期刊论文 38 会议论文 7 专利 2
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