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Three-dimensional ovonic threshold switching model with combination of in-band and trap-to-band hopp
  • 所属机构名称：北京大学
  • 会议名称：IEEE Non-Volatile Memory Technology Symposium (NVMTS 2015)
  • 时间：2015.10.14
  • 成果类型：会议
  • 相关项目：相变存储器件OTS与OMS物理机理和模型研究
同会议论文项目
相变存储器件OTS与OMS物理机理和模型研究
期刊论文 5 会议论文 12
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