位置：成果数据库 > 会议 > 会议详情页
A three-dimensional numerical simulator of phase change memory by random nucleation and growth appro
  • 所属机构名称：北京大学
  • 会议名称：2015, Non-Volatile Memory Technology Symposium (NVMTS 2015)
  • 时间：2015.10.14
  • 成果类型：会议
  • 相关项目：相变存储器件OTS与OMS物理机理和模型研究
同会议论文项目
相变存储器件OTS与OMS物理机理和模型研究
期刊论文 5 会议论文 12
同项目会议论文
Three-dimensional ovonic threshold switching model with combination of in-band and trap-to-band hopp
A Data Retention Model for Phase-Change Memory by the Monte Carlo Approach
Interface Engineering to Enhance Phase Change MemoryProgrammability
Electronic and Electrothermal Switching Dynamics in Chalcogenide-based Phase-Change Memory (PCM)
An Improved SPICE model of Phase-change Memory (PCM) for Peripheral Circuits Simulation and Design
Transition from junction-Limited to Bulk-Limited Sub-threshold Conduction in Phase-Change Memory
Study on nucleation characteristic of phase-change memory set operation using numercial simulation
Stacked Ge2Sb2Te5/GeTe Multi-level Phase-change Memory with Asymmetric Double-Heater
A physical model of ovonic threshold switching effect for phase-change memory based on the trap-to-b
Critical Parasitic Capacitance in nano-scale phase-change memory (PCM) Cell
A Phase-Change Memory SPICE Model Adaptable to Different Device Geometry