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Function of the Upper/Lower Parasitic BJTs in PD SOI NMOS Device due tot he Back-Gate Bias Effect
  • 所属机构名称：北京大学
  • 会议名称：in Proc. EuroSOI
  • 时间：2012.1.24
  • 成果类型：会议
  • 相关项目：用于亚40纳米先进金氧半绝缘体上硅技术的精简模型研究
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