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Study of the stacking faults in a- plane GaN on r-plane sapphire grown by metal-organic chemical vap
  • 所属机构名称：北京大学
  • 会议名称：The 8th international conference on Nitride Semiconductors
  • 成果类型：会议
  • 相关项目：GaN基异质结构的光学偏振问题及其控制
作者： T. J. Yu|Z. J. Yang|L. W. Sang|H. Fang|G. Y. Zhang|
同会议论文项目
GaN基异质结构的光学偏振问题及其控制
期刊论文 39 会议论文 6 专利 4
同项目会议论文
Polarized Electroluminescences from InGaN/GaN MQWs Light Emitting Diodes
The influence of V/III ratio on the strain in the nonpolar a-plane GaN film grown by MOCVD
? Strain effect on polarized optical properties of C-plane GaN and M-plane GaN
Strain effect on optical polarization properties of a-plane GaN on r-plane sapphire
Light Extraction Efficiency Analyses for GaN Based Light Emitting Diodes by Ray Tracing Simulations