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GaN基异质结构的光学偏振问题及其控制
  • 项目名称：GaN基异质结构的光学偏振问题及其控制
  • 项目类别：面上项目
  • 批准号：60676032
  • 项目来源：国家自然科学基金
  • 研究期限：1900-01-01-1900-01-01
  • 项目负责人：于彤军
  • 依托单位：北京大学
  • 批准年度：2006
成果综合统计
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  • 期刊论文
  • 会议论文
  • 专利
  • 获奖
  • 著作
  • 39
  • 6
  • 4
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期刊论文
Analysis of junction temperatures in high-power GaN-based LEDs
Effects of V/III ratio on species diffusion anisotropy in the MOCVD growth of non-polar a-plane GaN
Anisotropic defect reduction in non-polar a-plane GaN grown by hydride vapor phase epitaxy on maskle
Strain effect s on InxAl1-xN crystalline quality grown on GaN templates by Metalorganic Chemical Vap
Different degradation behaviors of InGaN/GaN MQWs blue and violet LEDs
Indium-Induced Effect on Polarized Electroluminescence from InGaN/GaN MQWs Light Emitting Diodes
Microanalyses of the reverse-bias leakage current increase in the laser lift off GaN-based light emi
Positron annihilation in (Ga, Mn)N: A study of vacancy-type defects
Shock-Assisted Superficial Hexagonal-to-Cubic Phase Transition in GaN/Sapphire Interface Induced by
The origin and evolution of V-defects in InxAl1?xN epilayers grown by metalorganic chemical vapor de
杂质与缺陷对GaMnAs光学特性影响的研究
A genetic algorithm research on Lorentz oscillator model in infrared spectra of GaMnN
Spontaneous luminescence polarizations of wurtzite InGaN/GaN quantum wells
Analysis of mass transport mechanism in InGaN epitaxy on ridge shaped selective area growth GaN by m
Properties of GaN-based light-emitting diode thin film chips fabricated by laser lift-off and transf
Magnetic and magneto-transport properties of Ga1-xMnxN grown by MOCVD
Length dependence of polarization in spontaneous edge emissions from InGaN/AlGaN MQWs laser diodes
Influence of growth rate on structural and optical properties of AlInGaN quaternary epilayers
Polarization of edge emission from III-nitride light emitting diodes of emission wavelength from 395
Luminescence degradation of InGaN/GaN violet LEDs
Strain effect on photoluminescences from InGaN MQWs with different barriers grown by MOCVD
Electrical characteristics of InGaN/AlGaN and InGaN/GaN MQW near UV-LEDs
Study of the structural damage in the (0001) GaN epilayer processed by laser lift-off techniques
Study on structure of AlGaN on AlN interlayer by synchrotron radiation XRD and RBS
Modified transmission line model to investigate non-Ohmic contact behavior and its application on Ga
Influence of V/III flux ratio on electrical properties of AlInGaN/Gan heterostructures grown by MOCV
The origins of double emission peaks in electroluminescence spectrum from InGaN/GaN MQW LED
InGaN/GaN和InGaN/AlGaN多量子阱中应变对光致发光特性的影响
Strain effects on the polarized optical properties of InGaN with different In compositions
采用AlGaN/GaN阻挡层的大功率InGaN/GaN MQWs蓝光LED
GaMnN材料红外光谱中洛伦兹振子模型的遗传算法研究
垂直电极结构GaN基发光二极管的研制
激光剥离转移衬底的薄膜GaN基LED器件特性分析
Nonpolar a-plane light-emitting diode with an in-situ SiNx interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition
会议论文
Polarized Electroluminescences from InGaN/GaN MQWs Light Emitting Diodes
The influence of V/III ratio on the strain in the nonpolar a-plane GaN film grown by MOCVD
? Strain effect on polarized optical properties of C-plane GaN and M-plane GaN
Study of the stacking faults in a- plane GaN on r-plane sapphire grown by metal-organic chemical vap
Strain effect on optical polarization properties of a-plane GaN on r-plane sapphire
Light Extraction Efficiency Analyses for GaN Based Light Emitting Diodes by Ray Tracing Simulations
专利
一种薄膜型LED制备方法
分立晶粒垂直结构的发光二极管芯片的制备方法
带有二维自然散射出光面的 LED 芯片的制备方法
镁掺杂氮化镓基材料和发光二极管P型氮化镓的激活方法
于彤军的项目
AlInN基新型异质结构制备和极化、输运性质研究
期刊论文 33 专利 5
GaN纳米异质外延生长及其在发光器件中的应用
第一届亚太地区宽禁带半导体研讨会
AlGaN基深紫外LED光出射机制及其调控方法研究
InGaAlN四元系材料生长及其短波长发光机理研究
期刊论文 7