欢迎您!
东篱公司
退出
申报数据库
申报指南
立项数据库
成果数据库
期刊论文
会议论文
著 作
专 利
项目获奖数据库
位置:
成果数据库
>
期刊
> 期刊详情页
Suppressing the multimodal size distribution of InAs/GaAs quantum dots through flattening the surfac
ISSN号:1674-7348
期刊名称:Science China: Physics, Mechanics and Astronomy
时间:0
页码:788-792
相关项目:InAs/GaAsSb量子点自组装生长及其第II型DWELL结构研究
作者:
Wang Lu|Li MeiCheng|Wang WenXin|Gao HanChao|Tian HaiTao|Xiong Min|Zhao LianCheng|
同期刊论文项目
InAs/GaAsSb量子点自组装生长及其第II型DWELL结构研究
期刊论文 23
专利 3
同项目期刊论文
Investigation of antimony for arsenic exchange at the GaSb covered GaAs (001) surface
Phonon band structure and electron-phonon interactions in Ga and Sb nanowires: a first-principles st
First-principles study of interface relaxation effect on interface and electronic structures of InAs
Strain accumulation in InAs/In (x) Ga1-x As quantum dots
InSb缓冲层的波纹结构及其对InSb/GaAs外延薄膜电学性能的影响
Design for new structure InAs/InxGa1-xSb superlattice two-color-short and long wavelength infrared p
Theoretical investigation of infrared generation mechanism by quantum coherence in low-dimensional s
Evaluation of the In concentration of an InxGa1-xSb alloy layer in cross-sectional HRTEM images of I
First-principles investigation of carrier Auger lifetime and impact ionization rate in narrow-gap su
Comparative Study on InAs/InGaAs Dots-in-a-Well Structure Grown on GaAs(311) B and (100) Substrates
Ab initio study of electronic structures of InAs and GaSb nanowires along various crystallographic o
第一原理研究界面弛豫对InAs/GaSb超晶格界面结构、能带结构和光学性质的影响
(InAs)1/(GaSb)1超晶格原子链的第一原理研究
(InAs)1/(GaSb)1超品格纳线第一原理研究
无线传感器微能源自供电技术研究
Ga和Sb纳米线声子结构和电子-声子相互作用的第一性原理研究
低维半导体异质结中的量子相干红外发射机理理论研究
窄带隙超晶格中载流子俄歇寿命和碰撞电离率的第一性原理研究
Preparation of Composited Graphene/PEDOT:PSS Film for Its Possible Application in Graphene-based Organic Solar Cells