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First-principles study of interface relaxation effect on interface and electronic structures of InAs
  • ISSN号：0749-6036
  • 期刊名称：Superlattices and Microstructures
  • 时间：0
  • 页码：81-90
  • 相关项目：InAs/GaAsSb量子点自组装生长及其第II型DWELL结构研究
作者： Sun, Wei-Feng|Li, Mei-Cheng|Zhao, Lian-Cheng|
同期刊论文项目
InAs/GaAsSb量子点自组装生长及其第II型DWELL结构研究
期刊论文 23 专利 3
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