中文摘要：

综述了近年来对InAs／GaInSb Ⅱ型超晶格材料的研究结果，给出了禁带宽度与各层厚度和组分的关系。InAs／GaInSb Ⅱ型超晶格材料对应的工作波长范围在3—25μm，有望在LWIR和VLWIR方面替代HgCdTe。

英文摘要：

In this paper,recent research results for type Ⅱ InAs/GalnSb superlattices material will be reviewed. The dependence of energy gap on layer widths and alloy concentration is presented. The energy gap of type Ⅱ InAs/ GalnSb superlattices material can be tuned to respond to wavelengths in the 3 ～ 25 μm regime. It will also likely be an attractive alternative to HgCdTe for LWIR and VLWIR applications.