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Fast Growth of Highly Ordered TiO2 Nanotube Arrays on Si Substrate under High-Field Anodization
  • 时间:0
  • 分类:TQ134.11[化学工程—无机化工] TB383.1[一般工业技术—材料科学与工程]
  • 作者机构:Key Laboratory of Artificial Structure and Quantum Control,Ministry of Education,Department of Physics and Astronomy,Shanghai Jiao Tong University, Collaborative Innovation Center of Advanced Microstructures, Institute of Fundamental and Frontier Sciences,University of Electronic Science and Technology of China, School of Chemistry and Chemical Technology,Shanghai Jiao Tong University
  • 相关基金:supported by National 863 Program 2011AA050518;the Natural Science Foundation of China(Grant Nos.11174197,11574203,and 61234005)
中文摘要:

Highly ordered TiO2 nanotube arrays(NTAs) on Si substrate possess broad applications due to its high surfaceto-volume ratio and novel functionalities, however, there are still some challenges on facile synthesis. Here, we report a simple and cost-effective high-field(90–180V) anodization method to grow highly ordered TiO2 NTAs on Si substrate,and investigate the effect of anodization time, voltage, and fluoride content on the formation of TiO2 NTAs. The current density–time curves, recorded during anodization processes, can be used to determine the optimum anodization time. It is found that the growth rate of TiO2 NTAs is improved significantly under high field, which is nearly 8 times faster than that under low fields(40–60 V). The length and growth rate of the nanotubes are further increased with the increase of fluoride content in the electrolyte.

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