中文摘要：

交错的背接触异质接面(IBC-HJ ) 太阳能电池能有超过 25% 的变换效率。然而，前面表面钝化和结构在 IBC-HJ 太阳能电池的性质上有大影响。在这份报纸，详细说明了数字模拟被执行了调查做的 n 类型和内在的非结晶的硅(a-Si ) 层的栈在 IBC-HJ 的前面表面上提供的前面表面地(FSF ) 的潜力太阳能电池。模拟结果清楚地显示 FSF 的电场应该是足够强壮的排斥少数带并且在前面表面附近堆积主要搬运人。然而，在强壮上的电场趋于驾驶电子进 a-Si 层，导致严重再结合损失。n 类型做的非结晶的硅(n-a-Si ) 层以做水平和厚度被优化了。优化的内在的非结晶的硅(i-a-Si ) 层应该与精力乐队差距是尽可能薄的(E _{比 1.4 eV 大的 g} ) 。另外，有关接口缺点的模拟强烈建议 FSF 是必要的前面表面什么时候没完美地被使钝化。没有 FSF， IBC-HJ 太阳能电池可以变得更敏感连接缺点密度。

英文摘要：

Interdigitated back contact-heterojunction （IBC-HJ） solar cells can have a conversion efficiency of over 25%. However, the front surface passivation and structure have a great influence on the properties of the IBC-HJ solar cell. In this paper, detailed numerical simulations have been performed to investigate the potential of front surface field （FSF） offered by stack of n-type doped and intrinsic amorphous silicon （a-Si） layers on the front surface of IBC-HJ solar cells. Simulations results clearly indicate that the electric field of FSF should be strong enough to repel minority carries and cumulate major carriers near the front surface. However, the overstrong electric field tends to drive electrons into a-Si layer, leading to severe recombination loss. The n-type doped amorphous silicon （n-a-Si） layer has been optimized in terms of doping level and thickness. The optimized intrinsic amorphous silicon （i-a-Si） layer should be as thin as possible with an energy band gap （Es） larger than 1.4 eV. In addition, the simulations concerning interface defects strongly suggest that FSF is essential when the front surface is not passivated perfectly. Without FSF, the IBC-HJ solar cells may become more sensitive to interface defect density.