提出了一种室温条件下构筑铂覆盖硅纳米线阵列的有效方法。通过将种子生长法和化学沉积技术的有机结合,高质量的铂纳米结构被成功地构筑在硅纳米线阵列表面。采用扫描电镜、X-射线衍射和电化学方法对制备材料的形貌和性质进行了表征。结果表明:所沉积的铂膜具有多孔三维结构,展现了一个放大的电化学活性面积,是相同几何面积硅片电极的6.17倍。对于甲醇电氧化反应,这种具有独特结构的材料显示出优异的催化活性和稳定性,优于铂纳米覆盖的硅片电极。
An effective route was developed for the fabrication of platinum-coated silicon nanowire arrays(Pt/SiNWAs) at room temperature.By judiciously combining the seed-growth method and the electroless deposition technique,high-quality three-dimensional(3D) Pt nanostructures were created on the surface of large-area SiNWAs.Scan electron microscopy,X-ray diffraction,and electro-chemical techniques were used to characterize the Pt/SiNWAs.Experimental results suggested that the proposed Pt film exhibited unique 3D structure,thus leading to higher electrochemical active surface area(about 6.17 times than that of Si wafer).Importantly,the as-prepared Pt/SiNWAs exhibited excellent electrocatalytic activity toward methanol oxidation in comparison with the Si wafer-supported Pt nanoparticle film and could be used as a promising nanoelectrocatalyst.