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Stacked type-II GaSb/GaAs self-assembled quantum dot structure with 1.35 μm light emission at
  • ISSN号：1386-9477
  • 期刊名称：Physica E: Low-Dimensional Systems and Nanostructu
  • 时间：2012.7.31
  • 页码：173-176
  • 相关项目：高性能长波长InAs/GaSb二类超晶格材料基础研究
作者： Yanhua Zhang|Yulian Cao|Yongxian Gu|Tao Yang|
同期刊论文项目
高性能长波长InAs/GaSb二类超晶格材料基础研究
期刊论文 33
同项目期刊论文
540 meV hole activation energy for GaSb/GaAs quantum dot memory structure using AlGaAs barrier
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Narrow-band Type IISuperlattice Photodetector with Detection Wavelength Shorter than 2 um
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Impact of bandstructure of Ohmic contact layers on the response feature of p-i-n very longwavelength
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长波和甚长波及其双色InAs/GaSb二类超晶格红外探测器的研究进展
Dark current mechanism of unpassivated mid wavelength type II InAs/GaSb superlattice infrared photod
Observation of linear and quadratic magnetic field-dependence of magneto-photocurrents in InAs/GaSb
How to Use Type II InAs/GaSb Superlattice Structure to Reach Detection Wavelength of 2-3 mu m
High Structural Quality of Type II InAs/GaSb Superlattices for Very Long Wavelength Infrared Detecti
Multilayered type-II GaSb/GaAs self-assembled quantum dot structure with 1.35 mu m light emission at
含有AlGaAs插入层的InAs/GaAs三色量子点红外探测器
Dark current mechanism of unpassivated mid wavelength type II InAs/GaSb superlattice infrared photodetector