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Longer than 1.9 mu m photoluminescence emission from InAs quantum structure on GaAs (001) substrate
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2015.7.27
  • 页码：-
  • 相关项目：高性能长波长InAs/GaSb二类超晶格材料基础研究
作者： Cao, Yulian|Huang, Wenjun|Luo, Shuai|Yang, Tao|
同期刊论文项目
高性能长波长InAs/GaSb二类超晶格材料基础研究
期刊论文 33
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含有AlGaAs插入层的InAs/GaAs三色量子点红外探测器
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