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Impact of bandstructure of Ohmic contact layers on the response feature of p-i-n very longwavelength
期刊名称:Applied Physics Letters
时间:2015.6.29
页码:263502-1-263502-5
相关项目:高性能长波长InAs/GaSb二类超晶格材料基础研究
作者:
Yulian Cao|Ke Liu|Wenjun Huang|Shulong LU|
同期刊论文项目
高性能长波长InAs/GaSb二类超晶格材料基础研究
期刊论文 33
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含有AlGaAs插入层的InAs/GaAs三色量子点红外探测器
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