中文摘要：

为了改善传统的双台面工艺受光刻设备和工艺精度限制这一缺陷，引入了掩埋金属自对准工艺．新工艺使SiGeHBT的制作不受最小光刻条宽的限制，从而有效利用了现有的光刻精度．由此工艺得到的器件测量结果证明，在不提高现有光刻设备精度的基础上，掩埋金属自对准工艺对器件的性能有了改进．

英文摘要：

Aiming at improving accuracy of photoetching technology in conventional double-mesa process, this article introduced buried-metal layers and developed silicon based buried-metal self-aligned process in order to increase the mesa area utilization efficiency. Novel process has advantages of smaller junction area, larger met- al-semiconductor contact area and fewer pinhole fabrication defects, with no increase of fabrication difficulties or advancement of photolithography equipments.