位置:成果数据库 > 期刊 > 期刊详情页
Reusing of transmitted light by localized surface plasmon enhancing of Ag nanoparticles in organic solar cells
  • ISSN号:1673-1905
  • 期刊名称:《光电子快报:英文版》
  • 时间:0
  • 分类:TN304.21[电子电信—物理电子学] TB383[一般工业技术—材料科学与工程]
  • 作者机构:[1]Key Laboratory of Display Materials & Photoelectric Devices (Ministry of Education) and School of Materials Science & Engineering, Tianjin University of Technology, Yianjin 300384, China, [2]Tianjin Key Lab for Photoelectric Materials & Devices, Tianjin 300384, China
  • 相关基金:This work was financially supported by the National Natural Science Foundation of China (Nos. 60876046 and 60976048), the Tianjin Natural Science Foundation (Nos. 13JCYBJC18900, 13JCZDJC26700 and 12JCQNJC01300), the Scientific Developing Foundation of Tianjin Education Commission (No. 20100723), and the Tianjin Key Discipline of Material Physics and Chemistry.
中文摘要:

ZnO nanoparticles films were prepared via sol-gel process and incorporated into inverted organic photovoltaic devices with a structure of ITO/ZnO/P3HT:PCBM/MoO3/Ag,in which ZnO film served as an electron selective layer.The effects of annealing temperature of ZnO film on the device performance were investigated.When the annealing temperature was 300 ℃,a well-arranged ZnO thin film was obtained,and the optimized device had doubled short circuit current density(JSC) and seven-fold higher power conversion efficiency(PCE)compared to the devices without ZnO film.This improvement could be attributed to the enlarged interfacial area of ZnO/active layer and better energy band matching which causes an efficient electron extraction and a decreased interface energy barrier.At particularly high annealing temperature,dramatically increased sheet resistance of indium tin oxide(ITO) was found to cause PCE deterioration.Our finding indicates that it is highly important to investigate both morphology and electrical effects for understanding and optimizing organic photovoltaic(OPV) performance.

英文摘要:

ZnO nanoparticles films were prepared via sol-gel process and incorporated into inverted organic photovoltaic devices with a structure of ITO/ZnO/P3HT:PCBM/MoO3/Ag, in which ZnO film served as an electron selective layer. The effects of annealing temperature of ZnO film on the device performance were investigated. When the annealing temperature was 300℃, a well-arranged ZnO thin film was obtained, and the optimized device had doubled short circuit current density (Jsc) and seven-fold higher power conversion efficiency (PCE) compared to the devices without ZnO film. This improvement could be attributed to the enlarged interfacial area of ZnO/active layer and better energy band matching which causes an efficient electron extraction and a decreased interface energy barrier. At particularly high annealing temperature, dramatically increased sheet resistance of indium tin oxide (ITO) was found to cause PCE deterioration. Our finding indicates that it is highly important to investigate both morphology and electrical effects for understanding and optimizing organic photovoltaic (OPV) performance.

同期刊论文项目
同项目期刊论文
期刊信息
  • 《光电子快报:英文版》
  • 主管单位:
  • 主办单位:天津理工大学
  • 主编:巴恩旭
  • 地址:天津市西青区宾水西道391号
  • 邮编:300384
  • 邮箱:Oelett@yahoo.com.cn
  • 电话:022-23679707 23657134
  • 国际标准刊号:ISSN:1673-1905
  • 国内统一刊号:ISSN:12-1370/TN
  • 邮发代号:6-198
  • 获奖情况:
  • 中国期刊方阵“双效”期刊
  • 国内外数据库收录:
  • 荷兰文摘与引文数据库,美国工程索引,英国科学文摘数据库
  • 被引量:147