An air-stable inverted photovoltaic device using ZnO as the electron selective layer and MoO3 as the blocking layer
- ISSN号:1673-1905
- 期刊名称:《光电子快报:英文版》
- 时间:0
- 分类:TN405.97[电子电信—微电子学与固体电子学] O241.82[理学—计算数学;理学—数学]
- 作者机构:[1]Key Laboratory of Display Materials and Photoelectric Devices, Education Ministry of China, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China, [2]Tianjin Key Lab. for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China
- 相关基金:This work has been supported by the National Natural Science Foundation of China (Nos.60876046 and 60976048), the Key Project of Education Ministry of(No.209007), the Tianjin Natural Science Council (No.0ZCKFGX01900), the Scientific Developing Foundation of Tianjin Education Commission (No.20100723) and the Tianjin Key Discipline of Material Physics and Chemistry.
作者:
宋朋飞[1,2], 秦文静[1,2], 丁国静[1,2], 闫齐齐[1,2], 杨利营[1,2], 印寿根[1,2]
关键词:
高稳定性, MOO3, 发电装置, 阻挡层, 光伏, 空气, ZNO, 电子, Butyric acid, Conversion efficiency, Fatty acids, Indium compounds, Photovoltaic effects, Silver, Tin, Tin oxides, Zinc oxide
中文摘要:
一个空气马厩光电的设备基于在铟锡氧化物(ITO ) 的转换结构的 znic 氧化物 nanoparticles (ZNP )/ZnO/poly (3-hexylthiophene )(P3HT ) :[6,6 ] 苯基 C61 奶油的酸甲基酉旨(PCBM )/MoO3/Ag 被学习。我们发现 MoO3 层的最佳厚度是 2 nm。当堵住层的 MoO3 被介绍时,设备的 fill 因素从 29% ~ 40% 被增加,力量变换效率直接从 0.35% ~ 1.27% 被支持。在这台转换结构设备的周围的条件下面的稳定性多由于在 polymer/Ag 接口的改进稳定性更好。改进被归因于高级搬运人活动性和 MoO3 层的合适的乐队差距。
英文摘要:
An air-stable photovoltaic device based on znic oxide nanoparticles (ZNP) in an inverted structure of indium tin oxide (ITO)/ZnO/poly (3-hexylthiophene) (P3HT): [6,6]-phenyl C61-butyric acid methyl ester (PCBM)/MoO3/Ag is studied. We fm.d that the optimum thickness of the MoO3 layer is 2 nm. When the MoO3 blocking layer is introduced, the fill factor of the devices is increased from 29% to 40%, the power conversion efficiency is directly promoted from 0.35% to 1.27%.The stability under ambient conditions of this inverted structure device much is better due to the improved stability at the polymer/Ag interface. The enhancement is attributed to the high carriers mobility and suitable band gap of MoO3 layer.