中文摘要：

原文如此，由做的 AI 或 N 的粉末被燃烧合成综合了，用 AI，粉末和 NH4CI 作为化学使活跃之物作为掺杂物和 polytetrafluoroethylene 搽粉。AI 的形成原文如此做了的由散分光计表明的 X 光检查衍射，拉曼分光计，扫描电子显微镜学和精力的描述，原文如此做的 N 和 N 共同做原文如此稳固的答案粉末分别地。准备粉末的电的介电常数在 8.212.4 GHz 的频率范围被决定了。它显示电的介电常数原文如此准备了粉末被做的纯 AI 或 N 改进了，由 AI 和 N 的减少共同做。纸论述一个方法调整绝缘的性质原文如此，在 GHz 的粉末变化。

英文摘要：

The SiC powders by AI or N doping have been synthesized by combustion synthesis, using AI powder and NH4Cl powder as the dopants and polytetrafluoroethylene as the chemical activator. Characterization by X-ray diffraction, Raman spectrometer, scanning electron microscopy and energy dispersive spectrometer demonstrates the formation of Al doped SiC, N doped SiC and the AI and N co-doped SiC solid solution powders, respectively. The electric permittivities of prepared powders have been determined in the frequency range of 8.2-12.4 GHz. It indicates that the electric permittivities of the prepared SiC powders have been improved by the pure AI or N doping and decrease by the AI and N co-doping. The paper presents a method to adjust dielectric property of SiC powders in the GHz range.