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MOCVD生长InxGa1-xN薄膜的表征;
  • 期刊名称：人工晶体学报, 2005年 34卷 6期,1118-1121
  • 时间：0
  • 相关项目：室温铁磁半导体材料及其器件应用
作者： 李亮, 张荣,谢自力,张禹,修向前,
同期刊论文项目
室温铁磁半导体材料及其器件应用
期刊论文 389 会议论文 158 著作 16
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GaN纳米线材料的特性和制备技术
Growth and properties of magne
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MOCVD生长InxGa1-xN薄膜的表征
Low-frequency excess noise cha
Investigation of Mn-implanted
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退火温度对纳米ZnO薄膜结构与发
Mn注入n型Ge单晶的特性研究.
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Studies on the heterostructure
傅里叶磁光谱仪中的起偏器和检偏
Preparation GaxMn1-xN DMS mate
The growth of GaN films on Si
Ferromagnetism of Ni-doped ZnO
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Subbands transport of the two-
Thermal annealing of InN films
Experimental Evidence of an Oc
Characterization of GaN1-xPx a
Analysis of local structures a
A spin injector
GaN氢化物气相外延生长系统的设
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The solubility of phosphorus i
Comment on "Radiative and nonr
Investigation into the energy
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Study of structures and magnet
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Study of dry oxidation of alum
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Study on strain and piezoelect
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Negative electrochemical capac
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Investigation of the crystal t
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Miscibility calculation of GaN
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InN薄膜的氧化特性研究
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