中文摘要：

采用固/液熔接法制备了CuW/ZL101A整体材料,并对CuW/ZL101A扩散溶解层组织结构与形成机制进行了研究。实验表明,当熔接条件为（690~705）℃/60 min可以获得良好的结合界面,其界面结合为扩散与溶解结合,界面扩散溶解层主要由平面状扩散溶解层、柱状方向性扩散溶解层、共晶扩散溶解层3部分组成,其生长方向均趋于沿界面法线方向生长,利用扫描电子显微镜和X射线衍射仪观察和分析了各扩散溶解层的新相组成。以705℃/60 min为例,分析了整体界面扩散溶解层组织结构演变和形成机理：平面状扩散溶解层和柱状方向性扩散层分别由铜钨界面原子沿CuW界面形核结晶横向生长连成整体形成小平面状扩散溶解层,再转向正常纵向生长所形成;共晶扩散溶解层是由接近及远离共晶成分点的铝铜形成层片状伪共晶及网状离异共晶组织;以熔接690℃保温不同时间对界面扩散溶解层的影响可知：随着熔接时间延长,界面扩散溶解层形貌相同,无新相层的形成,仅扩散厚度存在差异。

英文摘要：

The CuW/ZL101 A integrated materials were prepared by a solid/liquid diffusion bonding process. The microstructures and formation mechanism of the diffusion solution layer（DSL） were investigated. The phase composition was analyzed by SEM and XRD. The results show that a good bonding interface is obtained at 690～705 °C for 60 min. With the growth direction perpendicular to the interface, the interfacial DSL mainly consists of planar DSL, columnar DSL and eutectic DSL. The microstructure evolution and formation mechanism of the DSL obtained at 705 °C for 60 min can be explained as follows： the nucleation occurs at the W-Cu interface, the lateral growth is firstly along the interface and the subsequent connection results in the small planar DSL, and then the longitudinal growth causes the formation of the columnar DSL. The eutectic DSL consists of lamellar pseudoeutectic and net divorced eutectic structures with the composition close to or far from the Al-Cu eutectic point. With the increase of bonding time at 690 °C, the DSL exhibits the similar morphology but different thicknesses without the formation of new phase.