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Performance improvement of Ge-Sb-Te material by GaSb doping for phase change memory
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2013
  • 页码：-
  • 相关项目：用于光子芯片的硫系玻璃薄膜制备与光敏机理研究
作者： 沈祥|
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用于光子芯片的硫系玻璃薄膜制备与光敏机理研究
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