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In-Plane-Gate Transparent SnO2 Nanowire Transistors
  • ISSN号：0741-3106
  • 期刊名称：IEEE Electron Device Letters
  • 时间：2012.11
  • 页码：1625-1627
  • 相关项目：氧化物半导体纳米线双电层静电调控及其器件应用
作者： Huixuan Liu|Qing Wan* |
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氧化物半导体纳米线双电层静电调控及其器件应用
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