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Short-Term Memory to Long-Term Memory Transition Mimicked in IZO Homojunction Synaptic Transistors
  • ISSN号：0741-3106
  • 期刊名称：IEEE Electron Device Letters
  • 时间：2013.12
  • 页码：1581-1583
  • 相关项目：氧化物半导体纳米线双电层静电调控及其器件应用
作者： Wan, Qing|Wan, Changjin|Zhu, Liqiang|Shi, Yi|
同期刊论文项目
氧化物半导体纳米线双电层静电调控及其器件应用
期刊论文 36 获奖 2
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