以Sm(Co0.62Fe0.25Cu0.1Zr0.03)7.5合金为靶材,采用磁控溅射工艺在单晶Si基片上沉积了SmCo基永磁薄膜。研究了溅射工艺参数对薄膜的晶体结构、微观结构和磁性能的影响。结果表明:溅射气压和溅射功率的改变引起了永磁相变,这主要依赖于溅射工艺条件对薄膜Sm含量的影响。高的溅射压强和溅射功率都会引起薄膜晶粒的粗大化和薄膜表面的粗糙化。薄膜的晶体结构和微观结构随溅射参数的变化决定了薄膜的面内磁学行为。当溅射压强为0.3 Pa和溅射功率为5.1 W/cm2时,制备的退火态SmCo基薄膜为TbCu7单相晶体结构,其面内永磁性能良好。
The SmCo-based,permanent magnetic films were grown by magnetron sputtering of the Sm(Co0.62Fe0.25Cu0.1Zr0.03)7.5 alloy-target on silicon substrates.The impacts of the growth conditions on the microstructures and magnetic properties of the film were characterized with X-ray diffraction,and atomic force microscopy.The results show that the sputtering power and pressure strongly affect the phase formation of the films.For example,as the sputtering power and pressure increase,the grain grows and the surface roughens after annealing and the in-plane magnetic property also changes with its microstructures.Under the growth conditions:at a pressure of 0.3 Pa,a sputtering power of 5.1 W/cm2,the pure TbCu7-phase dominates the SmCo-based permanent magnetic films.Possible mechanisms were tentatively discussed.