中文摘要：

随着IC工艺进人纳米工艺时代，集成度与工作频率的增加，伴随性能提高的是不断增加的芯片功耗．高功耗的直接后果是产生了高供电电流和高功耗密度，而过大的供电电流降低了供电网络的供电电压；过大的功耗密度升高了内核温度，反过来又会增加电路时延，降低芯片的性能．所以在芯片设计中，必须对芯片功耗、供电网络、3D热分析进行快速而精确的电热分析；同时，漏电流功耗随工作温度升高而明显增加所造成的电热耦合效应，以及纳米工艺所带来的较大工艺参数变化，都提高了电热分析的难度．文中给出了电热参量（功耗、供电电压和内核温度）分析的重要性与研究现状，展望了纳米工艺下日益显著的工艺参数变化对电热分析所带来的挑战．

英文摘要：

With IC scaling into nanometer era, integration and working frequency have been soaring up, which not only improves IC performance, but also largely elevates power consumption. As a direct result of deteriorated power consumption, supply current and power density are obliged to increase. Furthermore, supply voltage is drawn down by swollen supply current while die temperature increases owing to higher power density, which in turn stretches circuit delay and causes performance deterioration. Thus in IC design, it is imperative to implement electro-thermal （ET） analyses including power analysis, power/ground （P/G） network analysis, and three dimension （3D） thermal analysis. And ET coupling effect can amplify leakage power as die becomes hotter. Meanwhile, nanometer technologies cause rampant process variations （PV）. Both PVs and ET coupling complicate ET analyses. As to ET analyses of power consumption, supply voltage, and die temperature, the paper underlines its importance and surveys the state of this art. Moreover, it widely previews the challenges to ET analyses in nanometer IC design suffering rampant PVs.