位置：成果数据库 > 期刊 > 期刊详情页
<span><a><span style="color:windowtext;text-decoration:none;">Selective
  • 期刊名称：Chemical Research in Chinese Universitie
  • 时间：2014.8
  • 页码：556-
  • 相关项目：InN基窄带隙半导体材料的加压MOVPE生长与物性研究
作者： Qiu Yu|Li Pengchong|Liu Yang|Shen Rensheng|Xia Xiaochuan|Yu Zhennan|Chang Yuchun|Zhang Yuantao (通讯作者)|Du Guotong|
同期刊论文项目
InN基窄带隙半导体材料的加压MOVPE生长与物性研究
期刊论文 27 会议论文 8 获奖 2
同项目期刊论文
Parametric study on the controllable growth of ZnO nanostructures with tunable dimensions using cata
Evolution of the crystallographic planes of cone-shaped patterned sapphire substrate treated by wet
<br class="MsoNormal" /><span><a><span style="color:windowtext;t
Nucleation and growth of ZnO films on Si substrates by LP-MOCVD
Optical properties of InN films grown by pressurized-reactor metalorganic vapor phase epitaxy
Near-infrared electroluminescence emission from an n-InN nanodots/p-Si heterojunction structure
Analysis of Responsivity and Signal-to-Noise Ratio in PEPT
Effect of Phase Purity on Dislocation Density of Pressurized-Reactor Metalorganic Vapor Phase Epitax
Metal-organic Chemical Vapor Deposition of GaSb/GaAs Quantum Dots: the Dependence of the Morphology
Improvement of electroluminescence performance by integration of ZnO nanowires and single-crystallin
High-temperature continuous-wave laser realized in hollow microcavities
Band alignment of InN/6H-SiC heterojunction determined by x-ray photoelectron spectroscopy
Electrically Pumped Ultraviolet Random Lasing from p-ZnO:As Based on p-ZnO/N-GaN Heterojunction
Relationship between residual carrier density and phase purity in InN grown by pressurized-reactor M
退火对Ga2O3薄膜特性的影响
梯度铝镓氮缓冲层对氮化镓外延层性质的影响
温度对Si上MOCVD-ZnO成核与薄膜生长特性的影响