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Near-infrared electroluminescence emission from an n-InN nanodots/p-Si heterojunction structure
  • ISSN号：0022-3727
  • 期刊名称：Journal of Physics D: Applied Physics
  • 时间：2012.5.30
  • 页码：-
  • 相关项目：InN基窄带隙半导体材料的加压MOVPE生长与物性研究
作者： Wu Guoguang|Du Guotong|Gao Fubin|Wang Hui|Shen Chunsheng|Li Wancheng|
同期刊论文项目
InN基窄带隙半导体材料的加压MOVPE生长与物性研究
期刊论文 27 会议论文 8 获奖 2
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