中文摘要：

以混合的ZnO粉和金属In作为前驱物,通过化学气相沉积方法在Si衬底上合成了In掺杂的ZnO纳米带。利用场发射扫描电子显微镜、透射电子显微镜以及附带的能谱仪对它们的结构和成分进行了表征。结果表明,ZnO纳米带沿〈101-0〉方向生长;In的掺杂浓度是21%原子分数。讨论了ZnO纳米带的形成机制和光致发光特性。

英文摘要：

In-doped ZnO nanobehs were synthesized on silicon substrates through chemical vapor deposition method using a mixture of ZnO powders and In as precursor. The nanobelts were characterized by field-emission scanning electron microscopy, high-resolution transmission electron microscopy and energy dispersive X-ray spectroscopy. The results show that the nanobelts grow along the 〈 1010 〉 direction and content of In in the nanobelts is 21 at%. The formation mechanism and photoluminescence of the nanobelts were discussed.