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中文摘要：
利用皮秒脉冲激光激发碲镉汞线列探测器上的光敏元，发现光伏响应表现为在最初大约15ns范围内首先形成一个明显的负光生电压的响应谷，之后才演变为正的光伏响应峰．改变入射激光脉冲的光子能量发现，无论是光子能量大于禁带宽度的单光子吸收跃迁还是小于禁带宽度的双光子吸收跃迁，器件的光伏响应随时间的演变均表现出类似的规律．用光阑对探测器的受光面积进行限制将使负的光生电压减弱并接近消失．结合探测器线列的电极分布构形，将负光伏响应指认为p-电极的肖特基接触所致．利用该方法有可能对p-电极是否形成欧姆接触进行判定，其灵敏度应远高于常规的电学测量方法．
英文摘要：
A transient negative photovoltaic-response behavior was reported in a pixel of the linear array of HgCdTe infrared photovohaic detectors. When irradiated with a picosecond pulsed laser, the time profile of the responding voltage shows an apparent negative valley during the first 15 ns, then it evolves a positive peak. By changing the excitation laser energy, the transient photo-responses of the detectors show the similar time evolution profiles, no matter for the case of single photon absorption transition that the photon energy is larger than the bandgap or for the case of two photon absorption transition that the photon energy is smaller than the bandgap. Blocking the laser beam with an aperture to limit the irradiation area makes the negative photovohage decrease and even disappear. By considering the p-electrode configuration in the linear array of the detectors, the negative photovoltaic-response has been attributed to the Schottky contact behavior of the p-electrode. Such a new phenomenon could be used in characterizing the Ohmic contact of the p-electrode in this kind of photo-detectors, and its sensitivity is expected to be much higher than that of the conventional I-V measurements.
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