欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
报道了非直接接触、高分辨率的激光束诱导电流谱表征技术在检测半导体材料、器件工艺中的应用.研究结果表明：p型HgCdTe薄膜经硼离子注入后形成的n型区面积大于实际的离子注入区域;对不同注入剂量系列单元不同区域载流子扩散长度进行了提取,表明n区载流子扩散长度随硼离子注入剂量增加而减小.
英文摘要：
The line scan and mapping profiles of a series of HgCdTe n-on-p junctions with different boron implantation dose have been measured by laser beam induced current.The n-type region is larger than the actually boron-implanted area.The minority carrier diffusion length both inside and outside at p-n junction boundary can be extracted from the LBIC line scan profile.The response enhancement for the small optically sensitive area devices is due to enlarging the n-type area and carriers collecting effect on the external side.
同期刊论文项目
同项目期刊论文
期刊信息
位置：