中文摘要：

在室温（RT）下,采用直流（DC）磁控溅射在聚碳酸酯（PC）衬底上制备Ga掺杂ZnO（GZO）薄膜。通过X射线衍射（XRD）与基片曲率方法研究薄膜的残余应力。提出并讨论了厚度和溅射功率对GZO薄膜的应力影响并证实所有薄膜的应力均是压缩应力。研究表明随着薄膜厚度的增加,外应力可以得到充分释放。而溅射功率的变化可以改变GZO薄膜的应力和晶粒尺寸。研究表明溅射功率在140W的条件下制备的厚度225nm薄膜具有最大的晶粒尺寸和最小的压缩应力。结果表明改变溅射参数,比如溅射功率和薄膜厚度,GZO薄膜能够有效地释放应力。

英文摘要：

The Ga doped ZnO（GZO）films are deposited on polycarbonate（PC）substrate by direct current（DC）magnetron sputtering at room temperature（RT）.The residual stress of the films is investigated by X-ray diffraction（XRD）and wafer curvature method.Influence of thickness and sputtering power on stress properties of GZO thinlms grown on PC substrate by DC magnetron sputtering are reported and discussed.We find that the stress of all films is compressive stress.As the film thickness increase,the extrinsic stress can be fully relaxed.Change of the sputtering power results in the change of the stress and the difference of the grain size in the GZO films.For the films deposited with the thickness of 225 nm,the film deposited at 140 W has the largest crystal grain and the smallest compressive stress.From our experimental results,we suggest that by adjusting the sputtering parameters,such as sputtering power and thickness,the stress relaxation in the GZO thin film grown on polymer substrate at RT could be achieved.