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Effect of mixing rate and temperature on primary Si phase of hypereutectic Al-20Si alloy during control ed diffusion solidification(CDS) process
  • ISSN号:1001-2249
  • 期刊名称:《特种铸造及有色合金》
  • 时间:0
  • 分类:TG146.21[金属学及工艺—金属材料;一般工业技术—材料科学与工程;金属学及工艺—金属学]
  • 作者机构:[1]State Key Lab. of Advanced Processing and Recycling of Nonferrous Metals, Lanzhou University of Technology, Lanzhou 730050, China, [2]Key Lab. of Nonferrous Metal Alloys and Processing, Ministry of Education, Lanzhou University of Technology, Lanzhou 730050, China, [3]Metal Processing Institute, WPI, Worcester, MA 01609, USA.
  • 相关基金:supported by the National Natural Science Foundation of China(Grant Nos.51064017 and 51464031)
中文摘要:

Controlled Diffusion Solidification(CDS) is a promising process relied on mixing two liquid alloys of precisely controlled chemistry and temperature in order to produce a predetermined alloy composition. In this study, the CDS was employed to prepare hypereutectic Al-20%Si(mass fraction) alloy using Al-30%Si and pure Al of different temperatures. The mixing rate was controlled using three small crucibles with a hole of different diameters in their bottom. The effect of mixing rate and temperature on the microstructure of the primary Si-phase during the mixing of molten Al and Al-30%Si was studied. The results showed that when the diameter of the small crucible bottom hole is 16 mm, a higher mass mixing rate 0.217 kg·s-1 would results in a lower stream velocity 0.414 m·s-1. Conversely a lower mass mixing rate 0.114 kg·s-1(the diameter of the small crucible bottom hole is 8 mm) would result in a higher fluid stream velocity 0.879 m·s-1. A lower mass mixing rate would be better to refine the primary Si than a higher mass mixing rate. Meanwhile, the morphology and distribution of primary Si could also be improved. Especially, when Al-30%Si alloy at 820 °C was mixed with pure Al at 670 °C in the case of a mass mixing rate of 0.114 kg·s-1 and a pouring temperature of 680 °C, the average size of the primary Si phase would be only 18.2 μm. Its morphology would mostly be octahedral and the primary Si would distribute uniformly in the matrix microstructure. The lower mass mixing rate(0.114 kg·s-1) will enhance the broken tendency of Al-30%Si steam and the mixing agitation of resultant melt, so the primary Si phase can be better refined.

英文摘要:

Controlled Diffusion Solidification(CDS) is a promising process relied on mixing two liquid alloys of precisely controlled chemistry and temperature in order to produce a predetermined alloy composition. In this study, the CDS was employed to prepare hypereutectic Al-20%Si(mass fraction) alloy using Al-30%Si and pure Al of different temperatures. The mixing rate was controlled using three small crucibles with a hole of different diameters in their bottom. The effect of mixing rate and temperature on the microstructure of the primary Si-phase during the mixing of molten Al and Al-30%Si was studied. The results showed that when the diameter of the small crucible bottom hole is 16 mm, a higher mass mixing rate 0.217 kg·s^-1would results in a lower stream velocity 0.414 m·s-1. Conversely a lower mass mixing rate 0.114 kg·s^-1the diameter of the small crucible bottom hole is 8 mm) would result in a higher fluid stream velocity 0.879 m·s-1. A lower mass mixing rate would be better to refine the primary Si than a higher mass mixing rate. Meanwhile, the morphology and distribution of primary Si could also be improved. Especially, when Al-30%Si alloy at 820 °C was mixed with pure Al at 670 °C in the case of a mass mixing rate of 0.114 kg·s^-1and a pouring temperature of 680 °C, the average size of the primary Si phase would be only 18.2 μm. Its morphology would mostly be octahedral and the primary Si would distribute uniformly in the matrix microstructure. The lower mass mixing rate(0.114 kg·s^-1 will enhance the broken tendency of Al-30%Si steam and the mixing agitation of resultant melt, so the primary Si phase can be better refined.

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期刊信息
  • 《特种铸造及有色合金》
  • 中国科技核心期刊
  • 主管单位:中国科学技术协会
  • 主办单位:中国机械工程学会铸造分会
  • 主编:袁振国
  • 地址:武汉市汉口万松园路千禧园3号楼1-502
  • 邮编:430022
  • 邮箱:tzzz@public.wh.hb.cn
  • 电话:027-85358206 85486024
  • 国际标准刊号:ISSN:1001-2249
  • 国内统一刊号:ISSN:42-1148/TG
  • 邮发代号:38-109
  • 获奖情况:
  • 国家期刊奖,全国优秀期刊一等奖,2000获国家期刊奖
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  • 被引量:13531