位置:成果数据库 > 期刊 > 期刊详情页
Design and analysis of 20 Gb/s inductorless limiting amplifier in 65 nm CMOS technology
  • ISSN号:1674-4926
  • 期刊名称:《半导体学报:英文版》
  • 时间:0
  • 分类:TN912.3[电子电信—通信与信息系统;电子电信—信息与通信工程] TN929.11[电子电信—通信与信息系统;电子电信—信息与通信工程]
  • 作者机构:[1]Department of Microelectronic, Fudan University, Shanghai 201203, China, [2]jinan Ruitong Electric Service LTD, Ji'nan 250013, China
  • 相关基金:Project supported by the National High Technology Research and Development Program of China (No. 2011AA010404), the General Program for Intemational Science and Technology Cooperation Projects of China (No. 2010DFB 13040), the National Natural Science Foundation of China (No. 61076028), and the Doctoral Program of Higher Education of China (No. 20100071120026); The author would also thank the Agilent for the measure- ment of the chip.
中文摘要:

A high speed inductorless limiting amplifier(LA) in an optical communication receiver with the working speed up to 20 Gb/s is presented. The LA includes an input matching network, a four-stage 3rd order amplifier core, an output buffer for the test and a DC offset cancellation(DCOC). It uses the active interleaving feedback technique both to broaden the bandwidth and achieve the flatness response. Based on our careful analysis of the DCOC and stability, an error amplifier is added to the DCOC loop in order to keep the offset voltage reasonable.Fabricated in the 65 nm CMOS technology, the LA only occupies an area of 0.45 0.25 mm2(without PAD). The measurement results show that the LA achieves a differential voltage gain of 37 d B, and a 3-d B bandwidth of 16.5GHz. Up to 26.5 GHz, the Sdd11 and Sdd22are less than –16 d B and –9 d B. The chip excluding buffer is supplied by 1.2 V VDD and draws a current of 50 m A.

英文摘要:

A high speed inductorless limiting amplifier (LA) in an optical communication receiver with the work- ing speed up to 20 Gb/s is presented. The LA includes an input matching network, a four-stage 3rd order amplifier core, an output buffer for the test and a DC offset cancellation (DCOC). It uses the active interleaving feedback technique both to broaden the bandwidth and achieve the flatness response. Based on our careful analysis of the DCOC and stability, an error amplifier is added to the DCOC loop in order to keep the offset voltage reasonable. Fabricated in the 65 nm CMOS technology, the LA only occupies an area of 0.45 × 0.25 mm2 (without PAD). The measurement results show that the LA achieves a differential voltage gain of 37 dB, and a 3-dB bandwidth of 16.5 GHz. Up to 26.5 GHz, the Sddlm and Sdd22 are less than -16 dB and -9 dB. The chip excluding buffer is supplied by 1.2 V VDD and draws a current of 50 mA.

同期刊论文项目
同项目期刊论文
期刊信息
  • 《半导体学报:英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国电子学会 中国科学院半导体研究所
  • 主编:李树深
  • 地址:北京912信箱
  • 邮编:100083
  • 邮箱:cjs@semi.ac.cn
  • 电话:010-82304277
  • 国际标准刊号:ISSN:1674-4926
  • 国内统一刊号:ISSN:11-5781/TN
  • 邮发代号:2-184
  • 获奖情况:
  • 90年获中科院优秀期刊二等奖,92年获国家科委、中共中央宣传部和国家新闻出版署...,97年国家科委、中共中央中宣传部和国家新出版署三等奖,中国期刊方阵“双效”期刊
  • 国内外数据库收录:
  • 俄罗斯文摘杂志,美国化学文摘(网络版),荷兰文摘与引文数据库,美国工程索引,美国剑桥科学文摘,英国科学文摘数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊(2004版),中国北大核心期刊(2008版),英国英国皇家化学学会文摘,中国北大核心期刊(2000版)
  • 被引量:7754