中文摘要：

理论上详细分析了LED正向电压随温度变化的物理机理，并在大的电流范围（0．1-200mA）和温度范围（60-350K）内，对AIGaInP、InGaN材料系功率型LED正向电压随温度的变化关系进行了系统的实验研究。发现在恒定电流下，两者的变化关系可分为高温区和低温区两段。在高温区两者为线性反比关系，并且电压温度系数与正向电流有关，在低温区正向电压随温度减小而突然急剧增大。理论很好地解释了实验结果。

英文摘要：

The physical mechanism of the forward voltage as a function of the junction temperature in light-emitting Nodes （LEDs） was analyzed in detail. And experimental investigation was carried out systematically on the relationship between the forward voltage and the junction temperature in A/GaInP and InGaN high-power LEDs over wide current range （0. 1- 200 mA） and temperature range（60-350 K）. It is discovered that at a constant current,the relationship may be divided into two segrnents,i, e. in the high temperature region,a linear inverse relationship exists between them and the voltage temperature coefficient is closely relevant with forward current; while in low temperature region, forward voltage increases drastically as the junction temperature decreases. The experimental results is in good agreement with the theory.