中文摘要：

报道了光伏型长波Hg1-xCdxTe（x=0．224）n-on-p红外探测器数值模拟研究的结果．采用二维模型，在背照射方式下，以p区厚度、两电极间距离、结区杂质浓度分布、少子寿命为参量，模拟计算了R0A积、零偏光电流与这些参量之间的变化关系．计算表明，随p区厚度增加，R0A积下降；民A积随电极之间距离增大而增加，但量子效率随距离增大而降低，电极之间最佳距离大约为100μm；R0A积和光电流对结区杂质浓度分布形状不敏感；随少子（电子）寿命降低，R0A积和光电流下降，二维模型弥补了一维模型难以计算横向电流、电场的缺点。

英文摘要：

The performance of n-on-p long wavelength photovoltaic Hg1-xCdxTe （x = 0.224） photodiodes was simulated numerically. Calculation was based on two-dimensional model for the backside-illuminated configuration. The influence of several factors, including p-type region thickness, the distance from p-type region contact to n^＋ area, n-side doping profile, and lifetime of electron, on RoA product and zero-bias photocurrent was studied. Simulation results show that RoA product decreases with increasing the thickness of the p-type region. As the distance from p-type region contact to n^＋ area increases, RoA product increases, but quantum efficiency deceases, and the optimized distance is about 100μm. The performance of photodiodes is strongly dependent on minority carrier （electron） lifetime, but n-side doping profile is less important. Two-dimensional model is capable of simulating transverse current compared with one-dimensional model, and more suitable for modeling actual device.