中文摘要：

在室温下采用射频磁控溅射法制备了以ZnO薄膜为沟道层的薄膜晶体管（TFTs）．研究表明ZnO薄膜在紫外区具有较高的吸收率，并且ZnO-TFTs对紫外光照射较为敏感．因此，进一步深入研究了ZnO-TFTs紫外光照下的输出和转移特性，结果表明，紫外光照将引起较为明显的光响应电流，且经过光照的器件在光源移除7天后，ZnO沟道层中仍能观察到残余电导现象，其原因可以归结为紫外光辐射在ZnO沟道层中引入了一定数量的氧空位施主态缺陷．

英文摘要：

Transparent thin-film transistor （TFT） with ZnO film as a channel layer is fabricated at room temperature. ZnO film has a high absorption in the UV region and ZnO-TFT is sensitive to the UV illumination. We investigate the ultraviolet photoresponse of ZnO-TFT and find that the illumination with 254 nm light results in an evident photoresponse. The residual conductivity is observed in ZnO channel even the UV light was removed one week before. The UV illumination can induce the formation of oxygen vacancy defects which will act as donors in ZnO channel.