本文采用直流磁控溅射技术在玻璃衬底上制备了AZO/Cu、Cu/AZO和AZO/Cu/AZO三种复合结构多层膜,研究了生长温度对多层膜特性的影响,发现AZO/Cu双层薄膜具有最优的光电性能,其最佳生长温度为100~150℃。文中进一步考察了生长温度对AZO/Cu双层薄膜结构性能和表面形貌的影响,结果表明:合适的生长温度有利于改善AZO/Cu双层薄膜的晶体质量,进而提高其光电性能;150℃下沉积的薄膜具有最佳品质因子1.11×10^-2Ω^-1,此时方块电阻为8.99Ω/sq,可见光透过率为80%,近红外反射率约70%。本文在较低温度下制备的AZO/Cu双层膜具有较优的透明导电性和良好的近红外反射性,可以广泛应用于镀膜玻璃、太阳能电池、平板显示器等光电领域。
AZO/Cu bi-layer, Cu/AZO bi-layer, and AZO/Cu/AZO tri-layer films were prepared on glass substrates by DC magnetron sputtering at different temperatures. The comparative study of electrical and optical properties revealed that AZO/Cu hi-layer films possessed superior photoelectric properties among the three multilayer films, with optimized growth temperatures in the 100-150℃ range. Effects of growth temperature on the structural property and surface morphology of AZO/Cu bi-layer films were further investigated. Moderate growth temperatures could lead to high crystal quality of the films, and therefore improve the photoelectric properties. AZO/Cu bi-layer films grown at 150℃ had the highest figure of merit of 1.11×10^-2Ω^-1, with a low sheet resistance of 8.99 Ω/sq, high visible transmittance of 80%, and near infrared reflectance of about 70%. The combination of good transparent-conductive property, excellent nearinfrared reflectivity, and low-temperature deposition enables the AZO/Cu bi-layer films to be widely used in various fields such as coated glasses, solar cells, and flat panel displays.