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Performance and stability of amorphous InGaZnO thin film transistors with a designed device structur
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：2011.10.10
  • 页码：0845091-0845095
  • 相关项目：ZnO基薄膜室温生长及全透明柔性薄膜晶体管研究
作者： B. H. Zhao|X. F. Li|J. G. Lu|Z. Z. Ye|L. Gong|P. Wu|J. Huang|Y. Z. Zhang|L. X. Chen|
同期刊论文项目
ZnO基薄膜室温生长及全透明柔性薄膜晶体管研究
期刊论文 21 会议论文 6 获奖 2 专利 4
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