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Experimental Study on NBTI Degradation Behaviors in Si pMOSFETs Under Compressive and Tensile Strain
  • ISSN号：0741-3106
  • 期刊名称：IEEE Electron Device Letters
  • 时间：2014
  • 页码：714-716
  • 相关项目：纳米MOS器件中的表面粗糙度散射机理研究
作者： Wangran Wu|Chang Liu|Jiabao Sun|Wenjie Yu|Xi Wang|Yi Shi|Yi Zhao|
同期刊论文项目
纳米MOS器件中的表面粗糙度散射机理研究
期刊论文 9 会议论文 6
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